Development on Metal C-Ring with Light Clamping Load for Ultra-high Vacuum
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چکیده
منابع مشابه
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10(12) to 10(13) cm(-2)), and contact dimensions (20 to 500 nm). We uncover that Au ...
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B. Lee Roberts , Department of Physics, Boston University, Boston, MA 02215, USA for the Muon Collaboration[1] Abstract The Muon experiment, E821, at the Brookhaven AGS has the goal to measure the muon anomalous magnetic moment to a relative accuracy of . A superferric 14 m diameter storage ring has been constructed and an averaged magnetic field uniformity over the 90 mm diameter muon storage ...
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A new mesoporous MOF, Zn4O(bpdc)(btctb)(4/3) (DUT-32), containing linear ditopic (bpdc(2-); 4,4'-biphenylenedicarboxylic acid) and tritopic (btctb(3-); 4,4',4''-[benzene-1,3,5-triyltris(carbonylimino)]tris-benzoate) linkers, was synthesised. The highly porous solid has a total pore volume of 3.16 cm(3) g(-1) and a specific BET surface area of 6411 m(2) g(-1), adding this compound to the top ten...
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Polymer nanostructures were directly written onto substrates in ultra-high vacuum. The polymer ink was coated onto atomic force microscope (AFM) probes that could be heated to control the ink viscosity. Then, the ink-coated probes were placed into an ultra-high vacuum (UHV) AFM and used to write polymer nanostructures on surfaces, including surfaces cleaned in UHV. Controlling the writing speed...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1982
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.25.176